Power Semiconductors


Precise control of carrier lifetime is an essential factor in meeting the ever-increasing market demands for efficient power semiconductor device performance.  Power SemiconductorThe market is dominated by inverter and converter topologies, requiring high performance thyristors, IGBTs and very fast diodes.  Mounting requirements for reduced on-state losses, short turn-off times and soft recovery promote the use of sophisticated techniques to improve the design and performance of modern devices.  Excellent soft switching characteristics can be achieved by irradiation, reducing or eliminating the use of undesirable heavy metals in fabrication clean rooms and offering an exact process by which to realise different lifetime profiles.

 

Isotron is the only fast-turnaround provider of both Electron and Ion beam treatments for semiconductors.  They are used in combination to optimise switching characteristics.

 

Treatment with a high energy electron beam provides bulk control of minority carrier lifetime throughout the entire volume of the die, giving a very even and consistent performance across different production batches.  Power SemiconductorProducts can be treated in trays or boxes, preserving the clean conditions in which they were packed.   Electron Beam treatment provides effective and uniform tailoring of the softness of reverse recovery, while avoiding the increased leakage current associated with other techniques, such as gold or platinum diffusion.

 

Ion beam treatment, using protons or helium ions, targets the lifetime killing centres to the precise region required, ensuring that localised control is provided.  Power SemiconductorThe primary interaction of these ions with the silicon structure has a relatively sharp depth profile, allowing the region for treatment to be defined to a few microns.  This enables, for example, the drift region near the PN junction of a diode to be treated to reduce the reverse recovery parameters for soft switching, while leaving the forward voltage drop unchanged. Ion beam treatment is a vacuum process and so wafers are handled individually in our ISO Class 7 cleanroom in order to control particulates.  A range of ion species is available, the most commonly used of which are protons and helium ions (alpha particles).

 

Electron doses typically range from 0.05 to 1,000kGy (0.005 to 100 Mrad) and proton and helium ion doses from 1E9 to 1E13 ions/cm².  Irradiation is carried out with high uniformity and reproducibility and products are handled in an ISO class 7 cleanroom environment.  Services are performed in accordance with written procedures within our Quality Management System which is certified to BS EN ISO 9001.

 

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Did you know?


Carrier lifetime control by irradiation improves power semiconductor efficiency.